APPLICATIONS OF TCAD SIMULATION SOFTWARE TO THE STUDY OF FLOATING-GATE DEVICE

Authors

  • Cong Thinh Dang Ho Chi Minh City University of Technology
  • Tri Hao Mai Ho Chi Minh City University of Technology
  • Trang Hoang Ho Chi Minh City University of Technology

DOI:

https://doi.org/10.56651/lqdtu.jst.v8.n02.61.ict

Keywords:

Floating-gate device, Non-volatile memory, flash memory, Channel Hot Electron Injection, Fowler-Nordheim Tunnel, CMOS Process, TCAD

Abstract

The floating-gate device has become an established component of all electronic systems, especially Non-volatile memories in recent years. This paper produces a study for this device including the structure and operation (read, program/write and erase). A complete flow which uses ATHENA, ATLAS and DEVEDIT3D tools for 2D and 3D structure simulations including I-V characteristics, Channel Hot Electron Injection, and Fowler-Nordheim Tunnel simulations are performed in TCAD environment.

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Published

2021-01-07 — Updated on 2021-01-08

Versions

Issue

Vol. 8 No. 02 (2019)

Section

Articles